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Intel and Micron announce new ‘3D XPoint’ memory solution 1,000 times faster than current NAND flash storage

3D_XPoint_Die_1000

Intel has just announced a new breakthrough in computer storage technology developed in collaboration with Micro that is 1,000 times faster than the current-generation NAND flash chips upon which modern solid-state drives are built. The tech is called 3D XPoint (that’s “crosspoint”), and is the first new type of non-volatile memory created since 1989.

Incredibly, 3D XPoint isn’t just a theoretical product being developed, or an end-goal for a current project. It’s already in mass production and is expected to go on sale in 2016. Intel says the technology will enable a whole host of new applications, ranging from real-time disease tracking to 8K-capable gaming PCs if built into GPUs.

3D XPoint is also 1,000 times more durable, giving it a much longer lifespan than current NAND storage.

Intel says that at the moment, each 3D XPoint die is able to store 128 GB of data, though there are plans to increase that through further advancements in later versions.

Intel’s interactive 3D XPoint explainer

Though Intel hasn’t given a price for it yet, it’s expected that this new technology is going to cost quite a bit when it launches, but as time goes on, it’s very likely that we’ll see the price come down, eventually allowing it to replace SSDs. The transition will take time, much like the move from hard drives to solid-state storage, but it when it finally happens, you can expect to see some pretty serious performance gains in personal computers and mobile devices.

Intel and Micron Produce Breakthrough Memory Technology

New Class of Memory Unleashes the Performance of PCs, Data Centers and More

NEWS HIGHLIGHTS

  • Intel and Micron begin production on new class of non-volatile memory, creating the first new memory category in more than 25 years.
  • New 3D XPoint™ technology brings non-volatile memory speeds up to 1,000 times faster1 than NAND, the most popular non-volatile memory in the marketplace today.
  • The companies invented unique material compounds and a cross point architecture for a memory technology that is 10 times denser than conventional memory2.
  • New technology makes new innovations possible in applications ranging from machine learning to real-time tracking of diseases and immersive 8K gaming.

SANTA CLARA, Calif., and BOISE, Idaho, July 28, 2015 – Intel Corporation and Micron Technology, Inc. today unveiled 3D XPoint™ technology, a non-volatile memory that has the potential to revolutionize any device, application or service that benefits from fast access to large sets of data. Now in production, 3D XPoint technology is a major breakthrough in memory process technology and the first new memory category since the introduction of NAND flash in 1989.

The explosion of connected devices and digital services is generating massive amounts of new data. To make this data useful, it must be stored and analyzed very quickly, creating challenges for service providers and system builders who must balance cost, power and performance trade-offs when they design memory and storage solutions. 3D XPoint technology combines the performance, density, power, non-volatility and cost advantages of all available memory technologies on the market today. The technology is up to 1,000 times faster and has up to 1,000 times greater endurance3 than NAND, and is 10 times denser than conventional memory.

“For decades, the industry has searched for ways to reduce the lag time between the processor and data to allow much faster analysis,” said Rob Crooke, senior vice president and general manager of Intel’s Non-Volatile Memory Solutions Group. “This new class of non-volatile memory achieves this goal and brings game-changing performance to memory and storage solutions.”

“One of the most significant hurdles in modern computing is the time it takes the processor to reach data on long-term storage,” said Mark Adams, president of Micron. “This new class of non-volatile memory is a revolutionary technology that allows for quick access to enormous data sets and enables entirely new applications.”

As the digital world quickly grows – from 4.4 zettabytes of digital data created in 2013 to an expected 44 zettabytes by 20204 – 3D XPoint technology can turn this immense amount of data into valuable information in nanoseconds. For example, retailers may use 3D XPoint technology to more quickly identify fraud detection patterns in financial transactions; healthcare researchers could process and analyze larger data sets in real time, accelerating complex tasks such as genetic analysis and disease tracking.

The performance benefits of 3D XPoint technology could also enhance the PC experience, allowing consumers to enjoy faster interactive social media and collaboration as well as more immersive gaming experiences. The non-volatile nature of the technology also makes it a great choice for a variety of low-latency storage applications since data is not erased when the device is powered off.

New Recipe, Architecture for Breakthrough Memory Technology

Following more than a decade of research and development, 3D XPoint technology was built from the ground up to address the need for non-volatile, high-performance, high-endurance and high-capacity storage and memory at an affordable cost. It ushers in a new class of non-volatile memory that significantly reduces latencies, allowing much more data to be stored close to the processor and accessed at speeds previously impossible for non-volatile storage.

The innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of word lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to faster and more efficient read/write processes.

Interactive Photo Capsule: 3D XPoint™ Technology

3D XPoint technology will sample later this year with select customers, and Intel and Micron are developing individual products based on the technology.


Filed under: Tech Industry Tagged: 3d xpoint, Intel, Micron

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Mike Beasley

July 29th

Apple

Mac

Expect faster MacBooks with longer battery-life thanks to DDR4 RAM

speed

Matt Margolis is predicting that Apple will be switching from DDR3 to DDR4 RAM for future MacBooks this year, suggesting faster performance and improved battery-life.

One of Apple’s RAM manufacturer. Micron, says that DDR3 bandwidth tops out at around 17GB/s, while DDR4 aims to double this by 2015:

Since the introduction of the iPhone, the industry has responded with an evolutionary transition from 2.6 GB/s LPDDR1, to 8.5 GB/s LPDDR2, to 17 GB/s LPDDR3, the technology currently is powering today’s high-end devices in volume production. DRAM bandwidth has roughly doubled with each generation to keep pace with demand.

The next generation of low-power DRAM (LPDRAM)—also known as LPDDR4—addresses these constraints by doubling the bandwidth of LPDDR3 while maintaining power neutrality. For example, LPDDR4 targets 34 GB/s of total bandwidth for a x64 memory subsystem, doubling the bandwidth target from LPDDR3

The company has not given specific targets for improved battery-life, but says that it aims to reduce power consumption in both active and standby modes.

Margolis suggests that DDR4 RAM may also make it into future iPhones and iPads.

Filed under: iOS Devices, Mac Tagged: Apple, DDR3, DDR4, Dynamic random-access memory, iPad, iPhone, iPhone 6, MacBook, MacBook Air, MacBook Pro, Micron, Micron Technology, Random-access memory

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Ben Lovejoy

April 3rd

Apple

Mac

Expect faster MacBooks with longer battery-life thanks to DDR4 RAM

speed

Matt Margolis is predicting that Apple will be switching from DDR3 to DDR4 RAM for future MacBooks this year, suggesting faster performance and improved battery-life.

One of Apple’s RAM manufacturer. Micron, says that DDR3 bandwidth tops out at around 17GB/s, while DDR4 aims to double this by 2015:

Since the introduction of the iPhone, the industry has responded with an evolutionary transition from 2.6 GB/s LPDDR1, to 8.5 GB/s LPDDR2, to 17 GB/s LPDDR3, the technology currently is powering today’s high-end devices in volume production. DRAM bandwidth has roughly doubled with each generation to keep pace with demand.

The next generation of low-power DRAM (LPDRAM)—also known as LPDDR4—addresses these constraints by doubling the bandwidth of LPDDR3 while maintaining power neutrality. For example, LPDDR4 targets 34 GB/s of total bandwidth for a x64 memory subsystem, doubling the bandwidth target from LPDDR3

The company has not given specific targets for improved battery-life, but says that it aims to reduce power consumption in both active and standby modes.

Margolis suggests that DDR4 RAM may also make it into future iPhones and iPads.

Filed under: iOS Devices, Mac Tagged: Apple, DDR3, DDR4, Dynamic random-access memory, iPad, iPhone, iPhone 6, MacBook, MacBook Air, MacBook Pro, Micron, Micron Technology, Random-access memory

Check out 9to5Mac for more breaking coverage of iOS Devices, Apple, and iPhone.

What do you think? Discuss "Expect faster MacBooks with longer battery-life thanks to DDR4 RAM" with our community.

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Ben Lovejoy

April 3rd

Apple

Mac

$100 Pico Projector Beams Video at Full iPhone Resolution [Pico]

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Mario Aguilar

May 2nd

Uncategorized

Micron ships RealSSD C400 mSATA SSD into slender Ultrabooks

micron crucial realssd msata c400The only problem with mobile gizmos getting even more mobile? The cost of those bantam components squeezed within 'em. That said, at least we have the option to trim a few more millimeters from the chassis of our next-generation laptops, as Micron has announced a new mSATA solid state drive that's engineered specifically for the increasingly crowded Ultrabook market. The RealSSD C400 emanates realness, boasting a form factor that's around the size of a business card and arriving with capacities ranging from 32GB to 256GB with a SATA 6Gbps interface. Furthermore, Micron has tapped its 25 nanometer process technology to craft these things, with OEMs having access to the first lot; upgraders can look forward to a Crucial-branded version later this year, but who knows how much you'll have to pay.

Update: Looks like our pals at Storage Review have a full review up, replete with more benchmarks and charts than you could shake a 3- x 5cm stick at.

Continue reading Micron ships RealSSD C400 mSATA SSD into slender Ultrabooks

Micron ships RealSSD C400 mSATA SSD into slender Ultrabooks originally appeared on Engadget on Tue, 10 Apr 2012 17:27:00 EDT. Please see our terms for use of feeds.

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Darren Murph

April 10th

Uncategorized

Micron CEO Dead At 51

thumb_appleton%20(1)

The CEO of Micron Technology, Steve Appleton, died in a small plane crash today in Boise, Idaho. He was 51.

Appleton worked at the company since 1983, starting on the night shift production line. He died piloting a Lancair experimental aircraft around Boise.

He is survived by his wife Dalynn and his children.

Micron is a major semiconductor supplier and most notably built a number of memorable laptops and hard drives during the early days of the dot com years. The company currently produces the Crucial and Lexar memory lines, among other hardware.

via Micron



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John Biggs

February 3rd

Uncategorized

Micron CEO Dead At 51

thumb_appleton%20(1)

The CEO of Micron Technology, Steve Appleton, died in a small plane crash today in Boise, Idaho. He was 51.

Appleton worked at the company since 1983, starting on the night shift production line. He died piloting a Lancair experimental aircraft around Boise.

He is survived by his wife Dalynn and his children.

Micron is a major semiconductor supplier and most notably built a number of memorable laptops and hard drives during the early days of the dot com years. The company currently produces the Crucial and Lexar memory lines, among other hardware.

via Micron



Comments Off on Micron CEO Dead At 51

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John Biggs

February 3rd

Uncategorized

Hynix, Micron turn to Taiwan following Apple’s Anobit buy

News broke earlier this week that Apple has acquired Israel-based fabless flash memory firm Anobit for as much as $400 million according to TheMarker, adding another leading chip maker to the company’s portfolio. Anobit’s NAND flash memory is already used in Apple products including the iPhone and iPad, and the firm’s technology is said to offer several advantages over that of its rivals. As DigiTimes pointed out in a recent report, the move also means Anobit’s other clients are now forced to look elsewhere as Apple becomes the exclusive owner of Anobit’s chip technology. Major players including Hynix and Micron were Anobit partners in the past, taking advantage of the company’s proprietary technology that improves the performance and lifespan of its flash memory products. Hynix, Micron and others are now reportedly looking to Taiwan-based companies including Phison Electronics and Silicon Motion Technology following the acquisition. Direct gains from Apple’s Anobit buy include the company’s technology and talent, but another advantage over rivals now emerges as a clear secondary benefit — smartphone vendors that used NAND flash memory chips made by soon-to-be former Anobit clients will no longer be able to utilize Anobit’s class-leading technology.

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Zach Epstein

December 23rd

Apple

128Gb NAND Chips Promise SD Cards with Terabytes of Storage [Memory]

Cell phones have taken another step towards becoming full-fledged pocket computers with an announcement by Micron and Intel. Get ready to carry even more of your digital life on your phone. More »


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Andrew Tarantola

December 7th

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